investigation of effective parameters on dark currents of infrared insb detector

this article is a report of calculation and measurements of a p+-n insb photo-diode leakage current fabricated by mesa on the basis of the calculation and measurement of different leakage currents in insb photo-diode along with its variation it shows that at relatively low reverse biases (up to about 300 mv) g-r and shunt current are dominant. but at high reverse biases the tunneling current dominates. in this article we investigate the relation between device parameters and rate of leakage currents and investigated this relation by fabricating high quality p+-n diode